Key Takeaways
- Toshiba launches TPM1R408RH, an 80V N-channel power MOSFET for lower-loss power supplies
- The MOSFET is fabricated using Toshiba's latest-generation U-MOS11-H process
- It targets applications such as switched-mode power supplies for industrial equipment in AI data centers and communications base stations
- The TPM1R408RH features a drain-source On-resistance of 1.4mΩ (max) and improved trade-off between RDS(ON) and Qg
Introduction to Toshiba's Latest MOSFET
Toshiba Electronic Devices & Storage Corporation has introduced the TPM1R408RH, an 80V N-channel power MOSFET designed to reduce power losses in switched-mode power supplies. This new MOSFET is fabricated using Toshiba's latest-generation U-MOS11-H process, which enables a more efficient and compact design.
Technical Specifications
The TPM1R408RH features an optimized device structure, resulting in a drain-source On-resistance of 1.4mΩ (max), approximately 26% lower than Toshiba's previous-generation U-MOS X-H process. This improvement leads to a better trade-off between drain-source On-resistance (RDS(ON)) and total gate charge (Qg), achieving approximately a 45% reduction.
Comparison of MOSFET Technologies
| MOSFET | Fabrication Process | RDS(ON) (max) | Qg |
|---|---|---|---|
| TPM1R408RH | U-MOS11-H | 1.4mΩ | Improved trade-off with RDS(ON) |
| TPM1R908QM | U-MOS X-H | 1.9mΩ | - |
Benefits for Industrial Applications
The TPM1R408RH is designed to meet the increasing power demands in AI data centers and communications base stations. Its lower power losses and improved efficiency enable a more compact design, reduced heat generation, and lower electromagnetic interference (EMI). This results in improved system optimization, including easier thermal design and mounting.
Conclusion
The Toshiba TPM1R408RH is a significant advancement in MOSFET technology, offering improved performance and efficiency for switched-mode power supplies. With its optimized device structure and reduced power losses, this MOSFET is well-suited for applications in AI data centers and communications base stations.
Bottom Line
The TPM1R408RH from Toshiba is a highly efficient 80V N-channel power MOSFET that reduces power losses and improves system optimization. Its technical specifications, including a drain-source On-resistance of 1.4mΩ (max) and improved trade-off between RDS(ON) and Qg, make it an attractive solution for industrial applications requiring high power density and low EMI.