Key Takeaways
- Para Light launches ThermaFlat SiC MOSFET family for high-power design
- ThermaFlat technology reduces temperature-dependent RDS(on) drift by 8%
- Improved thermal stability and reliability for electrification markets
- Ultra-Low RDS(on) Drift Technology for reduced conduction losses
- ThermaFlat devices maintain flat on-resistance across wide operating temperatures
Introduction to ThermaFlat SiC MOSFET Family
Para Light Electronics has introduced the ThermaFlat SiC MOSFET family, addressing a significant thermal challenge in high-power design. The new semiconductor portfolio utilizes Para Light's Ultra-Low RDS(on) Drift Technology, delivering exceptional thermal stability, reduced conduction losses, and unmatched reliability for rapidly expanding electrification markets.
Solving Power Electronics' Most Persistent Bottleneck
The global transition toward electrification, driven by AI, HPC, renewable energy, EVs, and energy storage, demands higher output within smaller, cooler, and more efficient footprints. Conventional silicon and SiC MOSFETs face a built-in constraint: temperature-dependent RDS(on) drift. As junction temperatures rise, escalating on-resistance can trigger a cycle of higher conduction losses, excessive heat generation, and expanded cooling requirements.
ThermaFlat Technology: Redefining Thermal Stability
Para Light's ThermaFlat technology redefines the thermal dynamic, maintaining virtually flat on-resistance across wide operating temperatures while sustaining exceptionally low switching losses. In benchmark testing of the 650 V, 21mΩ TO-247 device, RDS(on) changes by only approximately 8% as junction temperature swings from -25°C to +125°C.
Comparison of ThermaFlat and Conventional SiC MOSFETs
| Technology | RDS(on) Drift | Thermal Stability | Reliability |
|---|---|---|---|
| ThermaFlat | 8% | High | High |
| Conventional SiC | 20-30% | Medium | Medium |
| Silicon | 50-60% | Low | Low |
Benefits of ThermaFlat Technology
The ThermaFlat SiC MOSFET family offers several benefits, including reduced conduction losses, improved thermal stability, and increased reliability. These benefits enable the development of more efficient and compact power systems for a wide range of applications, including electric vehicles, renewable energy, and energy storage.
Bottom Line
In conclusion, Para Light's ThermaFlat SiC MOSFET family addresses a significant thermal challenge in high-power design, delivering exceptional thermal stability, reduced conduction losses, and unmatched reliability. With its Ultra-Low RDS(on) Drift Technology, ThermaFlat technology is poised to revolutionize the power electronics industry, enabling the development of more efficient and compact power systems for a wide range of applications.