Keysight and WIN link design tools for GaN MMIC workflow

Key Takeaways

• Keysight Technologies and WIN Semiconductors have collaborated to create a joint MMIC design workflow for GaN MMICs
• The workflow integrates on-chip multi-domain simulation, 3D layout with verifications, and off-chip MMIC evaluation board design
• The global GaN RF device market is projected to reach $2.77 billion by 2031
• The new workflow automates simulation, optimization, and verification steps to ensure first pass tapeout success

Introduction to GaN MMIC Workflow

Gallium Nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) are crucial components in various applications, including 5G base stations, Wi-Fi access points, satellite payloads, and defense radar systems. To address the growing demand for GaN MMICs, Keysight Technologies and WIN Semiconductors have developed a joint MMIC design workflow. This workflow aims to achieve first pass tapeout success, reducing the risk of costly and time-consuming foundry respins.

Benefits of the Joint Workflow

The joint workflow connects on-chip multi-domain simulation, 3D layout with verifications, and off-chip MMIC evaluation board design into a single environment. This integrated approach enables MMIC design houses to automate the full set of simulation, optimization, and verification steps required to sign off on an MMIC design. By doing so, engineers can ensure that no analysis is skipped before submitting the design to the foundry for fabrication.

Comparison of GaN MMIC Design Workflows

WIN Semiconductors' NP 120P GaN Process Design Kit

WIN Semiconductors' latest NP 120P GaN Process Design Kit provides MMIC designers with access to process models and layout rules. When used with Keysight Advanced Design System (ADS) and RF Circuit Simulation Professional, these models automate the workflow, enabling MMIC design houses to achieve first pass MMIC tapeout.

Conclusion

The collaboration between Keysight Technologies and WIN Semiconductors has resulted in a powerful joint MMIC design workflow for GaN MMICs. By automating simulation, optimization, and verification steps, this workflow reduces the risk of costly foundry respins and enables MMIC design houses to capitalize on the growing GaN RF device market.

Bottom Line

The joint Keysight-WIN workflow is a significant development in the field of GaN MMIC design, offering a streamlined and automated approach to achieving first pass tapeout success. With the global GaN RF device market projected to reach $2.77 billion by 2031, MMIC design houses that adopt this workflow can gain a competitive edge and maximize their share of this growing market.